【摘要】 在电子散射能量沉积为双高斯分布的前提下,提出了一种提取电子束光刻中电子散射参数α,β和η的新方法.该方法使用单线条作为测试图形.为了避免测定光刻胶的显影阈值,在实验数据处理中使用归一化方法.此外,用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正.更多还原

【Abstract】 A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.更多还原