【摘要】 设计了双梯度掺杂漂移机制InP/GaP光二极管 ,研究了由于晶体不匹配所造成的缺陷以及这些缺陷对器件性能的影响 .结果表明InP/GaP光二极管具有很好的光谱响应和抗辐射特性 ,特别是在短波方向有高于 80 %的内量子效率 .这说明在双梯度掺杂漂移机制结构中使用晶格不匹配的衬底时 ,外延晶体中所产生的缺陷对器件性能的影响较小 ,器件在有大量缺陷和复合中心存在的情况下仍然可以具有较好的光电特性 ,从而为在强辐射带轨道运行的航天器使用太阳电池以及InP/Si器件技术提供了很好的设计依据 .更多还原

【Abstract】 A double graded doping drift dominated InP/GaP photodiode is designed and the affections of the dislocations,which are resulted from the mismatch between the epitaxial layer and the substrate,to the device characterizations are studied.The results show the InP/GaP photodiode has very good spectro-response and strong radiation resistance.Particularly it has the inner quantum efficiency over 80%.This means the device performance is less affected by dislocations in crystal that come from the crystal mismatch because of the use of the double graded doping drift dominated structure.The results will be helpful for the design of solar cells used in strong radiation orbits and InP/Si device technology.更多还原