【摘要】 为研究单基极薄基区晶体管的特性 ,设计了一种单侧基极引出结构薄基区的晶体管 ,在p型SOI衬底上全离子注入实现了基区宽度为 80nm的npn纵向结构 ,基区的平均浓度为 10 18cm-3 .经过版图设计和工艺流片 ,在2 μm实验工艺线上研制了这种器件 .基极采用电压输入 ,Vbe在 1 1V附近 ,跨导和电流增益都达到峰值 ,小信号电流增益 βac(ΔIc/ΔIb) =2 7,小信号跨导 gmac(ΔIc/ΔVbe) =0 4 5mS ,且 gmac/ gm(Ic/Vbe)比 βac/ β(Ic/Ib)大得多 ,跨导比电流增益更能准确地描述器件特性 ,这种器件更倾向于电压控制型器件 ,特别适用于数字电路的开发和应用 .更多还原

【Abstract】 A newly structured transistor with one-base contact is designed.This npn transistor’s structure is formed fully by ions implantation on a p-type wafer,the base width is about 80nm and the carrier concentration is 10 18cm -3.The transistor is fabricated on a 2μm laboratory line.The base is biased by voltage signals,and when V be is about 1 15V, β ac(Δ I c/Δ I b)=2 7, g mac(Δ I c/Δ V be)=0 45mS. g mac/ g m is far higer than β ac/ β .Therefore the transistor can be characterized or described accurately by its g m,and this type of transistor tends to be a voltage-controled device,and can be used in digital circuits.更多还原