【摘要】 对注F和未注FCC4 0 0 7器件在 10 0℃高温老化后的Co60 辐照特性进行了研究 .研究发现辐照前的高温老化减少了注F器件在辐照中的界面态陷阱电荷的积累 ,但是普通器件辐照前的高温老化在减少辐照中界面态积累的同时却增加了氧化物电荷的积累 ,损害了器件的可靠性 .可见 ,栅介质中F离子的引入可以明显提高器件的可靠性更多还原

【Abstract】 The influence of 100℃ burn-in before radiation on fluorinated CC4007 nMOS and those no fluorinated is reported.It is found that the burn-in before radiation can reduce the interface-trap in irradiation;but for no fluorinated in irradiation the interface-trap is reduced and oxide-trap is increased.The burn-in in 100℃ before radiation can reduce the reliability for device no fluorinated.But introducing minute amounts of fluorinate ions can improve the reliability in irradiation.更多还原