【摘要】 IC器件尺寸的纳米化,要求高的光刻曝光分辨率,在采用短波长和大数值孔径曝光系统提高分辨率的同时导致了焦深变浅,进而对晶片表面的平坦化要求越来越高。在比较了IC工艺中的四种平坦化技术基础上,重点综述了唯一可以实现全局平坦化的化学机械抛光(CMP)方法的发展、应用及展望。更多还原

【Abstract】 With feature size of IC devices shrinking to nano-scale,high lithography resolution was required,which is achieved by shorter wavelength and bigger numerical aperture.But the above methods simultaneously result in shallower depth of focus,which make high planarity for wafer be necessary in order to achieve accurate lithography and pattern shift.After four kinds of planar methods are compared,as unique global planarization method,the development,application and prospects of chemical mechanical polishing are reviewed.更多还原