【摘要】 根据单晶硅各向异性腐蚀的特点,以晶格内部原子键密度为主要因素,温度、腐蚀液浓度等环境因素为校正因子,建立了一个新颖的硅各向异性腐蚀的计算机模拟模型。在VC++开发环境下利用OpenGL技术,实现了硅各向异性腐蚀过程的三维微观动态模拟,为深刻理解硅的各向异性腐蚀过程提供了直观的界面。更多还原

【Abstract】 A novel computer simulation model has been built for silicon anisotropic etching process. Based on the anisotropic etching characteristic of silicon,this model depends mainly on the bonds density of inner atoms with respect to environment factors such as temperature,concentration of the etchant. With VC++ and OpenGL,it has accomplished the micro dynamic simulation of silicon anisotropic etching and provided researchers with a vivid interface to the etching process.更多还原