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蓝宝石基LED外延片背减薄与抛光工艺研究
Study on the Back Lapping and Polishing of Sapphire-Based LED Epitaxial Wafers
【摘要】 研究了蓝宝石基LED外延片背减薄过程中去除速率和表面粗糙度与研磨转速和研磨压力的关系,比较了不同的磨料颗粒度对去除速率和表面粗糙度的影响,并研究了抛光过程中表面粗糙度随时间的变化规律,为背减薄与抛光工艺的优化提供了依据。
【Abstract】 The effects of plate rotation speed and jig pressure on the remove rate and surfaceroughness during the back lapping of sapphire-based LED epitaxial wafers are studied. The effects ofabrasive granularity are compared, and the relationship between surface roughness and polishingtime during the lapping process is also studied.All those works will be help to the improvement ofback-lapping and polishing technology.
【基金】 国家863计划项目(2004AA311030);北京市教育委员会资助项目(KZ200510005003);国家973计划(20000683-02);北京市教委项目(2002kj018);北工大博士启动基金(kz0204200387);北京市科委重点项目(D0404003040221)
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2005年09期
- 【分类号】TN305
- 【被引频次】36
- 【下载频次】917