【摘要】 通过对新型超净高纯试剂同常规CMOS酸碱试剂同时进行CMOS工艺中栅氧化前的清洗实验,从清洗后硅片残留金属量的电感耦合高频等离子体原子发射光谱分析、硅片表面形貌的AFM分析和MOS电容测量三个方面进行了应用实验。结果表明,以超净高纯乙腈为主要组分的新型试剂,其清洗效果总体优于常规CMOS酸碱试剂,可以考虑在半导体器件相应清洗工艺中采用。更多还原

【Abstract】 The new super-clean and high-purity reagent and the common CMOS reagent of acidor alkali were used simultaneously by cleaning experiment before grid oxidation in CMOS technology,the metal content of a piece of cleaned silica was measured by ACP-AES, the appearance pattern of apiece of cleaned silica was measured by AFM, MOS electric capacity was measured too. The experi-mental results showed that cleaning effect of the new reagent made of super-clean and high-purityacetonitrile was superior to usual CMOS acid and alkali cleansing solution, it was used as cleaningsolution for semiconductor.更多还原