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IC制造工艺与光刻对准特性关系的研究
Research on the Relation of IC Manufacture Process and Lithography Alignment
【摘要】 主要针对光刻对准特性,从单项工艺和工艺集成的角度,分析了影响光刻对准的各个主要因素,主要包括对准标记、工艺层、隔离技术等,提出了一些改善光刻对准效果的方法。
【Abstract】 The relation of IC manufacture process and lithography alignment are studied. Some key factors, such as alignment masker, process layer and isolation technology are analyzed. The ways of improving the alignment accuracy of photolithography are introduced.
【关键词】 光刻对准;
工艺层;
集成电路;
光刻工艺;
隔离技术;
【Key words】 lithography alignment; process layer; IC; lithography process; isolation;
【Key words】 lithography alignment; process layer; IC; lithography process; isolation;
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2005年06期
- 【分类号】TN405
- 【被引频次】14
- 【下载频次】342