【摘要】 介绍了基于0.18μm CMOS工艺设计的10 Gb/s光发射机电路,包括复接器和激光驱动器两部分。仿真结果表明,在1.8 V电源电压作用下该电路可工作在10 Gb/s速率以上,输入四路单端峰峰值为0.2 V的信号时,在单端50Ω负载上的复接输出电压摆幅可达到1.4 V以上,电路功耗约为230 mW。芯片面积为1.77 mm×0.94 mm。更多还原

【Abstract】 The circuit design of a 10Gb/s transceiver fabricated with 0.18μm CMOS technology is introduced,which is included in the multiplexer and laser diode driver.The simulation results show that the circuit can amplify the input signal amplitude from 0.2V to 1.4V on a 50Ω output resistance at 10Gb/s,with the total power consumption of about 230mW,and its size is about 1.77mm×0.94mm.更多还原