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纳米硅薄膜光学性质的测定与研究

Measurement and Study on Optical Properties of Nano-crystalline Silicon Films

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【作者】 钟立志张维佳崔敏吴小文李国华丁琨

【Author】 ZHONG Li-zhi~1, ZHANG Wei-jia~1, CUI Min~1, WU Xiao-wen~1, LI Guo-hua~2, DING Kun~2(1. Condensed Matter Physics & Material Physics Research Center,Beijing University of Aeronautics & Astronautics,Beijing 100083,CHN; 2. National Laboratory for Superlattices and Microstructures,Instituteof Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN)

【机构】 北京航空航天大学理学院凝聚态物理与材料物理研究中心中国科学院半导体研究所半导体超晶格国家重点实验室中国科学院半导体研究所半导体超晶格国家重点实验室 北京100083北京100083北京100083

【摘要】 通过测定纳米硅薄膜的透射谱,建立计算模型计算得出薄膜样品的折射率、厚度、吸收系数和光能隙。计算结果表明这种半导体材料在620 nm波长附近的折射率约为3.4,计算得到的厚度与用台阶仪测量的结果吻合很好。在620 nm波长附近的吸收系数介于吸收系数较小的晶体硅与吸收系数较大的非晶硅之间,光能隙约为1.6 eV,两者都随晶态含量增大而呈减小趋势。

【Abstract】 By measuring transmission spectra of nano-crystalline silicon films,the refractive index, thickness,photo-absorption coefficient and optical gap of the nano-crystalline silicon films were investigated utilizing an established computation model.The results show that the refractive index of the semiconductor material is about 3.4 at 620nm,and the calculated film thickness is well fitted with the measurement results by α-step profile.At 620nm,the value of photo-absorption coefficient is between crystalline silicon with the low photo-absorption coefficient and amorphous silicon with the high photo-absorption coefficient,and the optical band gap is about(1.6eV,)and both of which show degressive tendency with the increase of crystalline composition in the films.

  • 【文献出处】 半导体光电 ,Semiconductor Optoelectronics , 编辑部邮箱 ,2005年04期
  • 【分类号】TN304.055
  • 【被引频次】14
  • 【下载频次】440
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