【摘要】 采用近似方法对GaInNAs材料的能带结构进行了分析,并计算了应变GaInNAs/GaAs量子阱能级,在此基础上进一步计算了应变GaInNAs/GaAs量子阱的材料光增益谱。对计算结果的分析表明,应变GaInNAs/GaAs量子阱材料是一种可以应用于1300nm波段的新型长波长半导体光电子材料。更多还原

【Abstract】 The energy band structure of GaInNAs was analyzed by approximate method, and the energy level distribution of the strained GaInNAs/GaAs quantum well was calculated and discussed in detail.Further,the optical gain spectrum of strained GaInNAs/GaAs quantum well was explained.It is shown that GaInNAs is a promise material for long wavelength semiconductor optoelectronic devices.更多还原