【摘要】 应用标准CMOS工艺制作了横向多晶硅p+p-n+结,对其正向电流电压的温度特性进行了理论分析和实验研究。实验结果表明:横向多晶硅p+p-n+结的理想因子为1.89;在室温附近(T=27℃),恒定的正向偏置电流(1μA)工作条件下,横向多晶硅p+p-n+结正向压降的温度变化率约为-1.5mV/K,与理论计算值相吻合;并且应用横向多晶硅p+p-n+结正向压降的温度特性,研制成功非致冷红外微测辐射热计,其黑体响应率Rbb(1000K,10Hz)=4.3×103V/W。更多还原

【Abstract】 The lateral polysilicon p⁺p^-n⁺junction is fabricated using a commercial CMOS process.The temperature characteristics of forward current-voltage are theoretically analyzed in detail,and the related experiments are carried out.The experimental results show that the ideal factor of the polysilicon p⁺p^-n⁺junction is 1.89. At the room temperature of about 300K,the temperature coefficient of the foreword voltage at a constant current is about -1.5mV/K,which is agreement with the theoretical calculation.Based on the temperature characteristics of the polysilicon p⁺p^-n⁺junction forward voltage drop, the uncooled infrared microbolometer is developed. The blackbody responsivity R_bb（1000K,10Hz） is 4.3×10³V/W.更多还原