【摘要】 在垂直腔面发射激光器(VCSEL)中常用氧化物限制结构来对其进行电流和光场的限制。分别从氧化时间、氧化温度、氧化载气的气流量三方面讨论研究了它们对Al0.98 Ga0.02As层氧化深度、氧化速率的影响。最后得到最佳氧化条件:氧化温度为422 ℃,氧化载气的气体流量为1.5 L/min,氧化速率为0.6μm/min。用在此最佳氧化条件下氧化的外延片制成VCSEL器件,室温下其阈值电流大约为1.8 mA,最大输出功率为7.96 mW。更多还原

【Abstract】 The oxide-confined str uc ture is often used to confine current and optical field in vertical cavity surfa ce emitting lasers(VCSEL).The influences of oxidation time, oxidation temperatur e and oxidation carrier gas flow on oxidation depth and oxidation rate of Al ( 0.98)Ga (0.02)As layer are discussed respectively.The optimal oxidation cond itions are finally obtained,that is oxidation temperature:422℃; oxidation car rier gas flow:1.5L/min; oxidation rate:0.6μm/min.The threshold current of VCSEL under the above oxidation conditions is about 1.8mA at room temperature. The maximum power is 7.96mW.更多还原