【摘要】 采用不同的预处理方式浸蚀YG6硬质合金基体表面,随后在热丝化学气相沉积装置上沉积了金刚石薄膜。用扫描电子显微镜、X射线衍射仪以及洛氏硬度计对样品进行了分析检测。结果表明:一步或两步浸蚀法都能抑制沉积过程中基体表面钴的不利影响。采用两步法,即Murakami剂30min腐蚀碳化钨相,再用H2SO4∶H2O2=3∶7(体积比)混合酸腐蚀30s去除钴相,基体表面粗糙,金刚石薄膜形核密度高,结晶质量较好,金刚石涂层与硬质合金基体结合良好。更多还原

【Abstract】 The diamond films were deposited on the cemented WC-6%Co with different surface pretreatments via hot filament chemical vapor deposition. The surface morphology, texture and adhesion of the diamond films were investigated by means of scanning electron microscope, X-ray diffractometer and Rockwell hardness tester. The results show that one- and two-step chemical etching pretreatments can effectively reduce the content of cobalt on the surface of WC substrate. Comparing with different etching technology, firstly using Murakami reagent for 30 min, then an H₂SO₄∶H₂O₂=3∶7（volume ratio） solution for 30 s, the diamond nucleation density is greatly increased, resulting in a good adhesion between diamond film and the substrate.更多还原