【摘要】 报道了气态源分子束外延 (GSMBE)技术生长的Φ5 0mm ,Φ75mmInGaP/GaAs材料的晶体完整性 ,组分均匀性和表面缺陷密度。用PhilipsX Pert′s四晶衍射仪沿Φ5 0mm ,Φ75mmInGaP/GaAs样品的x轴和y轴以 5mm间隔测量ω/2θ双晶摇摆曲线 ,获得沿x轴和y轴方向的晶格失配度分布和组分涨落分布。结果表明 ,用GSMBE生长的Φ5 0mm和Φ75mmIn0 .4 9Ga0 .51 P与GaAs衬底的失配度分别为 1× 10 - 4和 1× 10 - 5,组分波动Φ5 0mm沿x轴和y轴分别为± 0 .1%和± 0 .2 % ,Φ75mm <± 1%。表面缺陷密度在 1× 10～ 1× 10 2 cm- 2 。更多还原

【Abstract】 The uniformity of Φ50 mm and Φ75 mm InGaP/GaAs grown by gas source molecular beam epitaxy was investigated. The lattice mismatch of 1×10^-4 to 1×10^-5 and the uniformity of gallium constituent better than 0.1% for Φ50 mm and 1.0% for （Φ75 mm） of InGaP/GaAs were achieved by an optimized gas source molecular beam epitaxy growth parameters. The surface dislocation density of few tens to 1×10² cm^-2 were obtained by using standard effusion cell for Ga and In.更多还原