【摘要】 用氧化铬 (Cr2 O3)作补偿掺杂剂、LEC法生长的GaAs窗口晶体 ,容易满足高阻补偿条件 ,碳、硅两种主要的残余杂质得到有效抑制 ,获得低自由载流子光吸收的优质GaAs红外激光出口材料。补偿掺杂剂氧化铬 (Cr2 O3)剂量为 99 9999%Ga和 99 9999%As量的优选范围是0 0 1%～ 0 0 4% (质量分数 )。室温下的自由载流子浓度低于 5× 10 6 cm- 3,对光吸收系数的贡献可以忽略。轻掺氧化铬高阻GaAs晶体具有良好的红外透射特性 ;10 6μm处激光量热法测量的红外光吸收系数约为 1 4× 10 - 3cm- 1 。更多还原

【Abstract】 By using Cr₂O₃ as a new compensating dopant, carbon and silicon as the two dominating impurities were restrained effectively, and the compensation mechanism equation was also met easily, thus the high-quality LEC GaAs crystals of low free carrier absorption infrared laser window material could be obtained. The excellent amount of Cr₂O₃ compensating dopant is in the range of 0.01%～0.04% of the total weight of 99.9999%Ga and 99.9999%As. Lightly Cr₂O₃ doped LEC GaAs crystals, whose free carrier concentration was less than 5×10⁶ cm^-3, have good characteristic of infrared transmission with the optical absorption coefficient about 1.4×10^-3 cm^-3 measured by laser calorimetry at the wavelength of 10.6 μm.更多还原