【摘要】 研究了衬底氮化过程对于氢化物气相外延 (HVPE)方法生长的GaN膜性质的影响。X射线衍射和原子力显微镜以及光荧光测量的结果表明 ,不同的氮化时间导致Al2 O3表面的成核层发生变化 ,进一步影响了外延层中的位错密度和应力分布。更多还原

【Abstract】 Effect of nitridation on the properties of hydride vapor phase epitaxy (HVPE) grown GaN films was studied. X-ray diffraction, atomic force microscope and photoluminescence were used to characterize the films. Results indicates that different nitridation duration affect the quality of nucleation layer, which further influences the distribution of strain and dislocation density in the films.更多还原