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碳团簇与硅单晶表面重构的蒙特卡罗模拟探索
The Monte Carlo Simulation for the Carbon Cluster and the Reconstruction of the Silicon (100) Surface
【摘要】 利用基于经验势(Tersoff势)的蒙特卡罗方法研究碳团簇稳定结构和硅片(100)表面重构这两个物理过程。模拟结果是含有偶数个原子的小团簇是主要由六圆环平铺而成,像石墨片似的平面结构。而含有奇数个原子的小团簇,会在团簇中心生成碳五圆环,团簇的会围绕五圆环卷曲。得到的结论是碳团簇的结构与团簇的幻数有关。模拟硅片表面重构的结果显示硅单晶表面有五种不同的重构模式,并且在不同的温度条件下,这几种重构模式所占的比重也不一样。低温时,硅单晶表面是以无重构的1×1二聚体为主。随温度升高,硅单晶表面出现2×1、c(2×2)、c(4×2)等重构模式。而在高温时,单晶硅(100)表面将出现的一种新的重构方式———吸附二聚体,它很可能是硅片的外沿生长、成核过程的关键。
【Abstract】 The stable structure of carbon cluster were simulated with the monte carlo method ,which is based on the tersoff potential,and we found that when the number of atoms that construct a cluster is even, the carbon cluster would have a graphite_like planar structure, but when the number is odd, the carbon cluster would tend to huddle. By simulating the reconstruction process of Si atoms in a fresh (100) surface, we found that there are different reconstruction modes, and at different temperature condition, the dominating reconstruction mode would be different. One of these mode’s, is the so_called ad_dimer, may play the key role in the epitaxial growth.
【Key words】 SiC; computer simulation; Monte Carlo; tersoff; ion beam implantation; carbon cluster; the reconstruction of silicon wafer surface; magic numbers of carbon clusters;
- 【文献出处】 中山大学学报(自然科学版) ,Acta Scientiarum Naturalium Universitatis Sunyatseni , 编辑部邮箱 ,2004年S1期
- 【分类号】O562
- 【被引频次】2
- 【下载频次】242