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用XPS和AFM等方法研究氮化钛薄膜的物理化学特性

Influence of Substrate Bias on Properties of TiN Films with X-ray Photoelectro n Spectroscopy and Atomic Force Microscopy Studies

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【作者】 江宁沈耀根张寒洁鲍世宁

【Author】 Jiang Ning 1,2,Shen Yaogen2,Zhang Hanjie1 and Bao Shining 1* (1.Physics Department,Zhejiang University,Hangzhou 310027,China;2.Department of Manufacturing Engineering & Engineering Management,City Unive rsity of Hong Kong,Hong Kong SAR,China)

【机构】 浙江大学物理系香港城市大学机械制造工程与管理系浙江大学物理系 杭州310027香港城市大学机械制造工程与管理系香港九龙杭州310027杭州310027教授

【摘要】 采用反应非平衡磁控溅射方法制备了氮化钛 (TiN)薄膜 ,沉积时的衬底偏压的范围从 0V到 - 5 0 0V。实验结果表明 :TiN薄膜的物理特性和力学性能随衬底偏压变化 ,最佳的薄膜硬度与弹性模量在偏压为 - 10 0V时得到。AFM的测量结果显示薄膜的表面形貌和粗糙度随衬底偏压变化有一个非线性的变化趋势 ,同样的趋势也出现在Ti2p和N1s的芯态能谱上。特定谱峰的强度和位置的变化预示着偏压引起的薄膜成分和化学态的变化 ,XPS的结果表明 :适当的偏压有助于TiN的成键 ,稳定的化学结构防止了表面的氧化和扩散 ,抑制了杂质和缺陷的形成 ,良好的机械特性归于表面形貌的改善。

【Abstract】 TiN films were grown on Si (100) substrate,biased with a voltage ranging from 0 to -500 V,by reactive under-balanced DC magnetron sputtering.The film was studi ed with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM ) study.The results show that the substrate bias voltage significantly affects i ts mechanical properties.For instance,grown at a bias of -100 V,the films displa y the highest hardness and elastic modulus.Plotting the film RMS surface roughne ss and the bias voltage,we have a curve goes down,reaching a bottom at -100 V an d goes up afterwards from -100V to -500V.Similar nonlinear variations in Ti2p and N1s core level spectra were also recorded before and after Ar ion spu ttering.We may conclude that bias voltage alters the chemical compositions and c hemical states during film growth.XPS results show that appropriate substrate bi as favors the bonding of TiN and that formation of stable chemical structure fur ther makes many surface phenomena,including surface diffusion,surface oxidation, impurity segregation san defect formation,more difficult to occur.We suggest tha t good mechanical properties originate from improvement in surface flatness.

【关键词】 磁控溅射氮化钛原子力显微镜X光电子能谱
【Key words】 Magnetron sputteringTitanium nitrideAFMXPS
【基金】 中国国家自然科学基金 (No.10 3 740 79);香港城市大学研究基金 (No .70 0 1184)
  • 【文献出处】 真空科学与技术学报 ,Chinese Journal of Vacuum Science and Technology , 编辑部邮箱 ,2004年06期
  • 【分类号】TB383
  • 【被引频次】19
  • 【下载频次】566
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