【摘要】 采用反应非平衡磁控溅射方法制备了氮化钛 (TiN)薄膜 ,沉积时的衬底偏压的范围从 0V到 - 5 0 0V。实验结果表明 :TiN薄膜的物理特性和力学性能随衬底偏压变化 ,最佳的薄膜硬度与弹性模量在偏压为 - 10 0V时得到。AFM的测量结果显示薄膜的表面形貌和粗糙度随衬底偏压变化有一个非线性的变化趋势 ,同样的趋势也出现在Ti2p和N1s的芯态能谱上。特定谱峰的强度和位置的变化预示着偏压引起的薄膜成分和化学态的变化 ,XPS的结果表明 :适当的偏压有助于TiN的成键 ,稳定的化学结构防止了表面的氧化和扩散 ,抑制了杂质和缺陷的形成 ,良好的机械特性归于表面形貌的改善。更多还原

【Abstract】 TiN films were grown on Si (100) substrate,biased with a voltage ranging from 0 to -500 V,by reactive under-balanced DC magnetron sputtering.The film was studi ed with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM ) study.The results show that the substrate bias voltage significantly affects i ts mechanical properties.For instance,grown at a bias of -100 V,the films displa y the highest hardness and elastic modulus.Plotting the film RMS surface roughne ss and the bias voltage,we have a curve goes down,reaching a bottom at -100 V an d goes up afterwards from -100V to -500V.Similar nonlinear variations in Ti2p and N1s core level spectra were also recorded before and after Ar ion spu ttering.We may conclude that bias voltage alters the chemical compositions and c hemical states during film growth.XPS results show that appropriate substrate bi as favors the bonding of TiN and that formation of stable chemical structure fur ther makes many surface phenomena,including surface diffusion,surface oxidation, impurity segregation san defect formation,more difficult to occur.We suggest tha t good mechanical properties originate from improvement in surface flatness.更多还原