【摘要】 以CF4和CH4为源气体,用PECVD法制备了不同沉积条件下的a C:F薄膜,测量了薄膜的厚度,研究了薄膜沉积速率和沉积工艺的关系,用傅立叶变换红外谱(FTIR)分析了薄膜的化学键结构,用扫描电镜和原子力显微镜分析了薄膜表面形貌,对薄膜在真空中进行了退火,研究了薄膜的热稳定性。实验表明,沉积速率在5～8nm/min之间,薄膜表面平整、致密,在300℃内有较好的热稳定性。更多还原

【Abstract】 Using CF₄ and CH₄ as the source gases, a-C:F thin films were fabricated by PECVD method in different depositions conditions. The thickness of films was measured, and the relations between deposition rate and fabrication conditions were investigated. The chemical bonding structures were analyzed by FTIR, the surface morphologies of the thin films were studied by SEM and AFM. After vacuum annealing process, the thermal stability of the film was investigated. The results indicated that the films fabricated with deposition rate between 5 and 8 nm per minute had a flat surface and a good thermal stability up to 300 ℃.更多还原