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非晶硅薄膜光吸收系数的研究

Study of Absorption Coefficient of Hydrogenated Amorphous Silicon

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【作者】 钱祥忠

【Author】 QIAN Xiang-zhong(Wenzhou Normal College, Wenzhou 325027,China)

【机构】 温州师范学院 浙江温州 325027

【摘要】 用化学气相沉积法制备非晶硅薄膜,测量了样品的光吸收系数及其波长区域范围。测得在最佳工艺条件下,非晶硅薄膜的光吸收系数随入射光波长增大而减小,随衬底温度升高而增大,随射频功率和反应气体流量的增大而减小,在700nm附近的光吸收系数不低于1×103cm-1,满足高性能液晶光阀对光电导层的性能要求。

【Abstract】 The hydrogenated amorphous silicon (a-Si) films were deposited by plasma enhanced chemical vapor deposition technique. The light absorption coefficients and their wavelength width of the a-Si films were measured. The results show that the light absorption coefficient of the a-Si film increased as the temperature of bed plate increased, and decreased as the RF power and gas flowing rate increased. The films with the absorption coefficient no less than 1×103 cm-1 at the wavelength of about 700 nm were obtained, which meets the technical requirements of a high quality liquid crystal light valve.

  • 【文献出处】 真空电子技术 ,Vacuum Electronics , 编辑部邮箱 ,2004年02期
  • 【分类号】O4841
  • 【被引频次】24
  • 【下载频次】835
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