【摘要】 采用钨丝催化化学气相沉积(Cat CVD)方法制备多晶硅(p Si)薄膜,研究氢气稀释率(FR(H2)/(FR(H2)+FR(SiH4))对制备多晶硅薄膜的影响。XRD和喇曼光谱分析分别显示(111)面取向的多晶硅峰及喇曼频移为520cm-1多晶硅峰的强度随氢气稀释率的增加而增强,由喇曼光谱计算的结晶度也有同样的趋势。通过分析测试结果得出,氢原子以表面脱氢、刻蚀弱的Si—Si键,及进入晶格内部进行深度脱氢等方式改善薄膜材料的结晶度。更多还原

【Abstract】 Polycrystalline silicon （p-Si∶H） films were prepared by Cat-CVD.The changes of the crystallinity of polycrystalline silicon phase are studied in samples deposited with hydrogen dilution ratio, H₂/SiH₄.The structural properties of these films have been investigated by Raman spectroscopy and X-ray diffraction spectroscopy. Raman spectroscopy studies show the crystalline fraction polycrystalline silicon phase increased with increasing the H₂/SiH₄ ratio. In the XRD and Raman pattern, the intensity of Si（111） peak and Si(520 cm^-1) peak increased with increasing H₂/SiH₄. According to the results of detections, we can conclude that hydrogen radical improve the crystallinity of the films by dehydrogenizing at the surface of the films, etching weak Si-Si network and capturing the hydrogen covered in the films.更多还原