【摘要】 应用原子层外延与分子层外延的理论研究了Turbo DiskMOCVD外延生长过程 ,发现生长主要发生在衬底表面的台阶处 ,当通过控制生长参数达到优质外延时 ,实际上是一种亚原子外延过程 ,优化调整反应参数实现了优质外延更多还原

【Abstract】 The atomic layer epitaxy theory and molecule layer epitaxy theory were applied to research the Turbo-Disk MOCVD epitaxy process. It was found the growth mainly happened at the sidestep of the surface. When the epitaxy was optimized through the control of growth parameter, the sub- atomic layer epitaxy was realized. And perfect epitaxy layer was obtained through the analysis and control of the system.更多还原