节点文献
大功率白光LED的制备和表征
Fabrication and Characterization of High-power White LED
【摘要】 用 1mm× 1mm的大尺寸GaN基蓝光发光二极管 (LED)芯片和YAG∶Ce黄光荧光粉在食人鱼支架上封装大功率白光LED。其 2 0 0mA下的发光功率为 13.8mW ,约为相同LED外延片制备的普通尺寸LED的 10倍。同时改变注入电流 ,发现功率曲线直到 2 0 0mA仍没有出现饱和或下降的趋势 ,白光的色温从 5 30 0K下降至 4 80 0K。同时研究了不同荧光粉混合比例对白光色度的影响
【Abstract】 In this work, the high power white lighting emitting diode(LED) were packaged on a anthropophagi lead by GaN-based blue LED chip in the size of 1 mm×1 mm and YAG∶Ce yellow fluorescence. Under the injection current of 200 mA,the luminous power is 13.8 mW, which is 10 times of the power of the diodes fabricated with the same LED wafer in normal size. The power does not show the trends of saturation or descent when the injection current is increased to 200 mA. However the color temperature is decreased from 5 300 to 4 800 K. The effect of ratio of phosphor mixture on chroma was also discussed.
- 【文献出处】 液晶与显示 ,Chinese Journal of Liquid Crystals and Displays , 编辑部邮箱 ,2004年02期
- 【分类号】O439
- 【被引频次】53
- 【下载频次】699