【摘要】 在HI 13串列加速器上,为满足单粒子效应研究对更大的线性能量转移(LET)值的要求,发展了高剥离态离子的加速与引出技术,及0°束 Q3D磁谱仪焦面辐照方法。已得到的LET值为86 7MeV/mg/cm2(45°倾斜入射,在Si中射程R～20μm),束斑在Φ10到Φ50和注量率从几十到5×104·sec-1·cm-2之间可调。论文详述了这一特殊方法成功应用于MOSFET功率管的单离子烧毁效应实验。更多还原

【Abstract】 Even higher linear energy transfer （LET） values of the heavy ions are needed as the investigations of single event effects of satellite devices are developing rapidly. In order to meet these requirements a special technique, so-called "ion simulation technique",for the acceleration and extraction of heavy-ions with highly stripped charge state from HI-13 Tandem accelerator has been developed as well as a device irradiation method with 0°ion beam and at the focal plane of Q3D magnetic spectrometer has been established. By use of them the heavy ion ¹²⁷I with high change state （q1=15, q2=25） is accelerated and transported to the focal plane of the Q3D spectrometer which is operated at 0° direction of beam, the ion energy is increased up to 270.34MeV from 150.00MeV which corresponds to the energy of ions scattered from Au at 40° of normal beam （q1=11, q2=19）. The LET value of the ions with high charge state is 86.7MeVmg^-1cm² for 45° incidence of beam to the devices and the reign in Si is 20μm. By utilizing of the characteristics of defocusing of the spectrometer the irradiation beam intensity, uniformity, and beam spot size can be adjusted in a wide rang, the intensities are few to 5×10⁵·sec^-1·cm^-2, the uniformity is better than 90%, the spot size are Φ10 to Φ50 and the purity is better than 98%. The "special method to increase linear energy transfer （LET） values" has been used successfully for the study of single event burnout （SEB） of the power MOSFET. The experimental details for measurements of the SBE cross section of power MOSFET are described in case of ions irradiation of ¹⁶O, ³⁵Cl, ⁷⁹Br, and highly stripped charge state ion ¹²⁷I, therefore the curves of the SBE cross section vs. LET values have been obtained, the SBE cross section for ¹²⁷I is higher than for ⁷⁹Br by two factors nearly. The measurements of SBE cross section for two types of and 10 pieces of devices are carried out. The lows of the SEB under different drain-source voltage V_DS and different grid-source voltage V_GS are demonstrated.更多还原