【摘要】 AlN薄膜作为绝缘层材料,在微电子领域的高温高功率器件中有很大应用潜力。采用离子束增强沉积(IBED)法制备了AlN薄膜,采用X光电子能谱(XPS)和电容-电压/电流-电压(C-V/I-V)等方法对AlN薄膜的微观结构和绝缘性能进行了研究,得到了影响薄膜电绝缘性能的主要参数。研究结果表明,沉积过程中向IBED系统通入一定的氮气可有效提高薄膜的N/Al,使其接近化学计量比(从0.53∶1到0.81∶1)及电绝缘性能(击穿电场约为1.42MV/cm)。更多还原

【Abstract】 AlN thin films are promising to be used as insulator for high-temperture and high-power devices in microelectronics fields. AlN thin films were prepared through ion-beam-enhanced-deposition （IBED） system. The microstructure and dielectric properties of AlN thin films were studied through XPS and C-V / I-V test. Some important dielectric parameters for AlN thin films were obtained. N₂ gas added into IBED system during deposition could enhance N/Al ratio （from 0.53∶1 to 0.81∶1） near to stoichiometrical structure and improve dielectric properties of AlN thin films （breakdown field to about 1.42 MV/cm）.更多还原