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高温氧化物晶体生长过程中温度场的数值模拟(英文)

A Numerical Simulation on Temperature Field during the Growth of HT Oxide Crystals

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【作者】 苏伟钟景昌张丽波赵英杰李林

【Author】 SU Wei1, ZHONG Jing-chang 2, ZHANG Li-bo1, ZHAO Ying-jie2, LI Lin2 (1 Changchun University of Science and Technology College of Computer Science and Technology, Changchun 130022, China; 2National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China)

【机构】 长春理工大学计算机科学技术学院长春理工大学高功率半导体激光国家重点实验室北京交通大学交通运输学院北京交通大学交通运输学院 长春130022长春130022北京100044北京100044

【摘要】 报道了诸如Nd:YAG等的高温氧化物晶体在使用Cz(Czochralski)方法晶体生长过程中温度场的数值模拟研究。在计算温度场的过程中引入了有限差分法(FDM)。首先建立了高温氧化物晶体生长的数学模型,然后给出了无量纲方程,最后确定了边界条件,使用有限差分方法求解了方程,并在此基础上编制了仿真程序。应用上述仿真程序描述了晶体和熔体中温度场的变化情况,分析了工艺条件对晶体和熔体温度场变化的影响。

【Abstract】 A numerical simulation study on temperature field in crystal and melt during the growth of high temperature (HT) oxide crystals such as Nd:YAG and etc., by Cz (Czochralski) method is reported. The finite differential method (FDM) is used to calculate the temperature field. First, the mathematical model of the HT oxide crystal growth is set, and then the dimensionless equations are given out. Finally, the boundary conditions are determined and the equations are solved by FDM. The simulation program is given by the above method. The changes of temperature field in the crystal and melt are described by the simulation program. The effects of processing conditions on field of temperature in crystal and melt are analyzed.

  • 【文献出处】 系统仿真学报 ,Acta Simulata Systematica Sinica , 编辑部邮箱 ,2004年02期
  • 【分类号】TN304.05
  • 【被引频次】1
  • 【下载频次】117
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