【摘要】 研究了以硫代乙酰胺、三乙醇胺、氯化亚锡和氨水作反应物,氯化铵作缓冲剂,采用化学浴法制备SnS薄膜的化学反应机理,分析了络合剂和氯化铵对反应的影响。结果表明,硫代乙酰胺和氯化亚锡主要为SnS薄膜的形成提供Sn2+与S2-,三乙醇胺作为络合剂可以维持溶液中Sn2+的浓度,氯化铵的加入可使反应液PH值在反应中平稳变化,有利于高品质薄膜的形成。更多还原

【Abstract】 This paper studies the deposition mechanism of SnS thin film by chemical bath using triethanolamine（TEA）,thioacetamide,SnCl₂·2H₂O,ammonia（aqeous） as reactants and using NH₄Cl（aqeous） as buffer aqeous.The influence of the complexing agent and NH₄Cl on the chemical reaction was analyzed.The results indicate that the thioacetamide and the SnCl₂·2H₂O were the reaction source of Sn²⁺and S^2-that can be used to form SnS thin films,and that the TEA as a complexing agent was able to maintain Sn²⁺concentration in solution. Adding the NH₄Cl can make the PH value of the solution change smoothly in reaction, which was favorable for the formation of high quality SnS thin films.更多还原