【摘要】 对六角形单胞VDMOSFET的特征导通电阻建立了一种新的数学模型—等效截面模型。给出了特征导通电阻与器件的横向、纵向结构参数的关系,并将计算结果与常规模型和实际测量值进行了比较,与实验结果符合得很好。更多还原

【Abstract】 The new mathematics model-equivalent section model of specific on-resistance with regular hexagonal cell VDMOSFET is found. The connection between the specific on-resistance and the lateral and vertical structural parameters of device is presented. The calculated results are compared with convention model and practical measured result. The excellent agreement with experiment measurements is obtained .更多还原