【摘要】 用离子束增强沉积制备高性能VO2薄膜,在溅射V2O5粉末靶的同时,用氩、氢混合束对沉积膜作高剂量离子注入,然后经500℃以上的退火,获得热电阻温度系数(TCR)高达4%的VO2薄膜。成膜机理是:利用高剂量氩离子注入的损伤效应使V2O5的V-O键断裂;利用注入氢的还原效应将V2O5转换成VO2薄膜;利用混合效应使界面结合牢固、薄膜结构均匀;利用掺杂效应,使氩出现在晶格的间隙位置,产生张应力,降低了薄膜的转换温度;利用轰击效应使薄膜致密,降低了氧空位,减小了晶界宽度,提高了其TCR。更多还原

【Abstract】 A new method, Ion Beam Enhanced Deposition （IBED）,was designed to prepare VO₂ film with high performance.During sputtering the target of V₂O₅ a high current of hydrogen and argon ions mixing beam was implanted into the deposited filmwith high （dose.）After annealing VO₂ film with TCR （（temperature） coefficient of resistance） as high as 4% was obtained.The formation mechanism of IBED VO₂ film was discussed.The part of V-O valence bond was broken due to the damaging effect of high dose argon and V₂O₅ structure was changed to VO₂ when the free oxygen combined with implanted hydrogen.The mixing effect of high dose argon could result in the excellent adhere to the substrate. Furthermore,the implantation of argon ions of high dose would also introduce stress in the film, which decreased the transition temperature of the IBED VO₂ film and enlarged the slope of resistance-temperature curve.The bombardment effect of argon implantation makes the VO₂ film dense, decreases the density of the oxygen vacancy and crystal boundary width,consequently increases the TCR.更多还原