【摘要】 提出了基于电子束的LIGA(Lithographie,Galvanoformung,Abformung)技术新概念。根据Grune公式就电子束能量对抗蚀剂刻蚀深度的影响进行了理论分析,并在SDS-2电子束曝光机上分别采用5keV、10keV、15keV、20keV、25keV、30keV等能量的电子束对国产胶苏州2号进行了曝光实验,得出了能量/刻蚀深度关系曲线。用5keV、30keV两种能量的电子束,通过改变曝光时间进行了曝光剂量对刻蚀深度的影响实验,得出了曝光剂量-刻蚀深度关系曲线。实验结果表明,增大电子束能量或增强曝光剂量,就可以增大刻蚀深度,证明了基于电子束光刻的LIGA技术不但是可行的,而且更易于加工各种带曲率的微器件。更多还原

【Abstract】 A novel LIGA(Lithographie, Galvanoformung, Abformung)based on Electron Beams is presented. Based on Grune formula, the dependence of electrons’penetration depth on different electron energy has been analyzed theoretically, and an experimental lithography investigation has been carried out on homemade resist Suzhou-2 in SDS-2 Electron Beams System at 5 keV, 10 keV,15 keV, 20 keV, 25 keV, 30 keV.The relation of energ/etching depth is obtained.Another experiment about the dependence of electrons’penetration depth on different writing dose has also been carried out at 5 keV, 30 keV.The relation of dose/etching depth is obtained.The results show that the electrons’penetration depth can be increased by increasing electron energy or writing dose, and that LIGA based on Electron Beams is suitable for producing micro three-dimensional profiles with different curvature in resist.更多还原