【摘要】 文章着重介绍了最近研制出的高质量宽带隙立方氮化硼薄膜的三种制备方法和结构特性 :(1)用射频溅射法在Si衬底上制备出立方相含量在 90 %以上 ,Eg>6 .0eV的c-BN薄膜 ;(2 )用离子束辅助的化学气相沉积法(CVD) ,在金刚石上外延生长出立方含量达 10 0 %的单晶c -BN薄膜 ;(3)用微波电子回旋共振CVD法 (MW -ECR-CVD)在金刚石上外延生长出高纯c-BN薄膜 .这些高纯c -BN薄膜 ,可应用于制作各种半导体 (主要是高温、高频大功率 )电子器件 .更多还原

【Abstract】 Wide bandgap c-BN thin films of high quality have been developed recently and their structural characteristics determined. Three different methods of fabrication were employed, as follows. (1) A thin film with cubic phase content of more than 90% and wide bandgap higher than 6.0 eV was prepared on silicon substrate by using rf magnetron sputtering. (2) Using ion-beam assisted chemical vapor deposition, a 100% pure single crystal c-BN film on diamond substrate was grown by epitaxy. (3) A high purity c-BN film was deposited also by epitaxy on a diamond substrate by means of microwave electron cyclotron resonance chemical vapor deposition. These high purity films can be used for the preparation of various semiconductor electronic devices, especially those operating at high frequency and power under high temperatures.更多还原