【摘要】 自Ovshinsky把相变材料用于光存储以来 ,一大批具有可逆光存储性能的材料不断出现 ,其中研究较多的是GeSbTe和AgInSbTe两种体系 .文章着重介绍了利用这两种材料制成的相变光盘记录介质的微观结构特点 ,阐述了其晶化机理 ;同时 ,较详细地概述了光盘的堆栈结构及掺杂其他元素对相变光盘性能的影响 ,并对比说明了GeSbTe和AgInSbTe两种体系在蓝光记录方面的各自特点更多还原

【Abstract】 Many new materials with reversible optical storage have been developed since Ovshinsky firstrealized optical storage based on phase transformation. Of these, the two most widely investigated systems are GeSbTe and AgInSbTe. We review the microstructural phase change characteristics of the recording layer in compact discs made of GeSbTe and AgInSbTe and describe the nucleation mechanism. In particular, we examine the influence of stacking and the doping of other elements on the disc properties, and compare the respective qualities of GeSbTe and AgInSbTe for use with blue laser input.更多还原