【摘要】 利用Al_AlN_Si(111)MIS结构电容_频率谱研究了金属有机化学气相沉积法生长的Si基AlN的AlN_Si异质结构中的电荷陷阱态 .揭示了AlN_Si异质结构界面电荷陷阱态以及AlN层中的分立陷阱中心 .结果指出 :AlN层中存在Et-Ev=2 5 5eV的分立陷阱中心 ;AlN_Si界面陷阱态在Si能隙范围内呈连续分布 ,带中央态密度最低 ,Nss为 8× 10 1 1 eV- 1 cm- 2 ,对应的时间常数τ为 8× 10 - 4s ,俘获截面σn 为 1 5 8× 10 - 1 4cm2 ;在AlN界面层存在三种陷阱态 ,导致Al_AlN_Si异质结构积累区电容的频散更多还原

【Abstract】 The charge trap states of AlN_Si(111) grown by metal_organic chemical, vapor deposition are studied by the capacitance spectroscopy of Al_AlN_Si MIS structure. The interface charge trap states of AlN_Si heterostructure and discrete trap center in AlN films are studied. The discrete trap center 2.55eV about E v in AlN film is found. The distribution of interface states is continuous in the energy range of Si. The lowest state density N ss is 8×10 11eV -1cm -2 in the middle of the band gap. The corresponding time constant τ is 8×10 -4s and the capture cross section σ n is 1.58×10 -14cm 2. There are three kinds of trap states in the boundary layer of AlN film which causes the frequency dispersion in the accumulation region of Al_AlN-Si MIS structure.更多还原