【摘要】 利用6 0 Coγ射线开展了浮栅ROM集成电路 (AT2 9C2 5 6 )总剂量辐照实验 ,研究了集成电路功耗电流和出错数在不同剂量率下的辐射响应 ;按照定义的失效标准和外推实验技术 ,探索了集成电路参数失效与功能失效时间随辐射剂量率的变化关系 ;根据失效时间与辐射剂量率的函数关系 ,预估了浮栅ROM集成电路AT2 9C2 5 6 (991 1 )和AT2 9C2 5 6 (9939)空间低剂量率辐射失效时间更多还原

【Abstract】 The experiments of ionizing radiation were performed on floating gate ROM devices by using 60 Co γ rays. The experimental aim was to examine the radiation response at various dose rates. According to the extrapolation technique and the failure criteria we defined, the parameter failure and function failure of devices vs. dose rate were studied. Finally, based on the function of failure time vs. dose rate, the failure time of floating gate ROM device in space radiation environment was predicted.更多还原