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有机半导体在金属Ru(0001)上的界面特性研究
Study on the interface of an organic semiconductor grown on Ru (0001) surface
【摘要】 利用UPS与ARUPS对有机半导体材料 5 (N 正丁基 3,4 ,9,10 四甲酸亚酰胺 N’ 苯基 ) 10 ,15 ,2 0 三苯基卟啉在Ru(0 0 0 1)上的界面特性进行了研究 .研究结果表明 ,在Ru(0 0 0 1)表面上 ,与有机半导体材料价带电子轨道有关的谱峰分别位于费米能级以下 4 5 ,6 8和 9 2eV处 ,其最高占据态 (价带顶位置 )位于费米能级以下 1 5eV处 .在衬底温度低于 2 0 0℃时 ,该有机半导体材料能够在Ru(0 0 0 1)上稳定吸附 ,在Ru(0 0 0 1)上的脱附开始于在 2 0 0℃ .ARUPS结果显示 ,构成该材料分子的卟啉和两个稠环不在同一个平面内 ,即该材料分子中的两个稠环平面成一定的夹角 ,至少有一个稠环平面与衬底表面不平行
【Abstract】 The electronic structure、thermal stability and molecule orientation of 5-(N-n-butyl-3,4,9,10-perylene tetracarboxyl icimide-N’-phenyl)-10, 15, 20-triphenylporphyrin growth on Ru(0001) surface has been studied with ultraviolet photoemission spectroscopy. Three emission features of the organic material are observed at 4.5, 6.8 and 9.2 eV respectively, and the HOS is located at 1.5eV below the Fermi level. The decomposition of the adsorbed organic substance on Ru(0001) surface is at roughly 200℃. The angle-resolved ultraviolet photoemission spectroscopy results suggest that the two condensed nuclei which compose the organic material, porphyrin and perylene, are not in the same plane. There exists an angle between these two planes of the condensed nucleus, one plane is not parallel to the substance.
【Key words】 organic semiconductor material; ruthenium surface; electronic structure;
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2004年05期
- 【分类号】TB34
- 【被引频次】2
- 【下载频次】176