【摘要】 采用有效哈密顿量和有相互作用的分立势模型 ,利用格林函数和耦合参量得出了量子点 (腔 )在有结边电荷积累极化时的线性和二阶非线性交流电导虚部 (emittance)的明确表达式 .发现在经典情况下 ,电导虚部和电化学电容都等于经典的几何电容 .在非经典情况下 ,如果发生全反射 ,电导虚部和电化学电容相等 ,但两者皆不等于经典的几何电容 .在有隧穿的情况下 ,电导虚部和电化学电容以及经典电容三者都不相等 .该结果对于量子器件中的电容测量具有指导作用更多还原

【Abstract】 We present explicit expressions for the linear and the second nonlinear imaginar y parts of admittanc (emittance) for the charge polarization of accumulation on b oth sides of the quantum dot (cavity) junctions by using Green function and the c oupling parameters in an effective Hamiltonian and the discrete potential model. We found that the emittance and the electrochemical capacitance are equal to the g eometric capacitance in the classical limit. In the nonclassical case the emitta nce is equal to the electrochemical capacitance, but not equal to the geometr i c capacitance if there is complete reflection. In the case where there is tu nneling the emittance and electrochemical capacitance as well as the geometric c apacitance are different. The results may be helpful for measurements on capacit ance on small_scale structures.更多还原