【摘要】 利用Si(0 0 1)向 [110 ]方向偏 4°角的斜切表面作为衬底 ,成功地制备了分布均匀的单畴的单原子In链阵列 .扫描隧道显微镜分析表明 ,沉积的In原子优先吸附在台面上沿着台阶内边缘的位置 ,并在两个Si的二聚体链之间形成稳定的In二聚体 .In二聚体组成直的单原子链 ,其生长机理与Car提出的“表面聚合反应”相一致 .另外 ,衬底具有非常窄的台面和双原子层台阶边的特殊结构是形成单畴的单原子链的关键更多还原

【Abstract】 Using a vicinal Si(001) surface with 4°miscut along [110] direction as a substrate, we have fabricated single-domain monatomic In chain arrays on a large scale. High-resolution scanning tunneling microscopic images reveal that the deposited In atoms preferentially form In dimers between the two neighboring Si dimer rows on the lower terrace along the step edge, due to the high coordination of these positions. Indium dimers remove dangling bonds of the Si dimers and saturate all In valency,and then develop into a long monatomic In chain along the step edge. It is worth highlighting that the ordered narrow terrace and the straight D B steps edge are key to the formation of the monatomic In chains.更多还原