【摘要】 铝诱导非晶硅薄膜晶化可以降低退火温度、缩短退火时间 ,是制备多晶硅薄膜的一种重要方法 .在此基础上 ,通过在退火过程中加入电场加速了界面处硅、铝原子间的互扩散 ,实现了非晶硅薄膜的快速低温晶化 .实验结果表明 ,外加电场 ,退火温度为 4 0 0℃ ,退火时间为 6 0min时 ,薄膜的晶化率大于 6 0 % ;退火温度为 4 5 0℃退火时间为30min时 ,薄膜已经呈现明显的晶化现象 ;退火温度为 5 0 0℃退火时间为 15min时 ,薄膜的x射线多晶峰强度与非晶峰强度之比为未加电场的 3— 4倍更多还原

【Abstract】 Aluminum-induced crystallization of amorphouse silicon (a-Si) is a suitable method for preparation of polycrystalline silicon (poly-Si) films. Biasing an electric field, which is perpendicular to the surface of the a-Si films, will accelerate the mutual diffusion of Al atoms and Si atoms in the interface during the aluminum-induced crystallization process and enhance the crystallization of the a-Si films obviously. The experimental results show that under the action of the electric field, more than 60% of a-Si transfer into poly-Si when the a-Si film was annealed at T a=400℃ and annealing time t a=60min; the a-Si films have obviously crystallized at T a=450℃ and t a=30min; at T a=500℃ and t a=15min, the XRD intensity of crystalline silicon (c-Si) components in the films is thrice to fourfold as strong as that in the films without the effect of an electric field.更多还原