【摘要】 采用磁控溅射法,在衬底温度为620℃时,通过引入合适的衬底负偏压（100～200V）,获得了结晶良好的Ta₂O₅薄膜,衬底负偏压增强了正离子对衬底表面的轰击作用,加速了其在衬底表面的松弛扩散效应,从而降低了Ta₂O₅薄膜的晶化温度,改善了其结晶性。同时,C—V测试结果表明:衬底负偏压进一步改善了Ta₂O₅薄膜的介电性能.更多还原

【Abstract】 At the substrate temperature of 620℃, crystalline TaO₅ films were sputtered byintroducing suitable negative substrate bias of 100～200V. It was thought that the ion bombard-ment. to the substrate was enhanced with introducing the negative substrate bias. The diffusionand looseness of deposited particles on the surface of substrate were accelerated. Consequently,the crystallization of Ta₂O₅ films was improved and the crystallization temperature was lowered.Meanwhile, the C-V result indicated that the dielectric properties of Ta₂O₅ films were furtherimproved by introducing negative Substrate bias.更多还原