【摘要】 采用循环伏安法成功制备了氢氧化钴薄膜修饰玻碳电极。考察了影响膜电沉积的因素 ,确定成膜液最佳pH为7.5 ,最佳扫描电位范围为1.00～ -0.20V。讨论了成膜过程及机理 ,成膜关键是Co2 +在电极表面的氧化。制得的膜修饰电极具有表面吸附反应特征 ,表面覆盖量相当于5～6个单层的氧化还原活性物质。膜修饰电极具有良好的稳定性 ,并对H2O2 表现出较高的电催化活性。线性回归方程为 :ΔIpa(μA)=15.92+4.99×104c(H2O2)(mol·L -1)(r=0.9976 ,n=18) ,线性范围为1.72×10 -5～9.92×10 -3mol·L -1,检出限为4.25×10 -6mol·L -1(S/N=3)。更多还原

【Abstract】 Acobalthydroxide filmmodified glassycarbon electrode was successfullyprepared by cyclic voltamˉmetry.Various factors affecting the electro-deposition of film were investigated,and the optimal pH value of film-forming solution was7.5and the optimal potential scan range being1.00to-0.20V.The film-forming process and mechanismoffilm-formingwere discussed,and the keytothe successful film-formingwas the oxidaˉtion of Co 2+ at the glassy carbon electrode.The resulting filmmodified electrode prepared had the characterisˉtics of a surface adsorbed redoxspecies,with a surface coverage of the redoxspecies corresponding to the presˉence of5～6monolayers of surface redox active species.The film modified electrode had good stability and showed high electro-catalytic activity towards the oxidation of H 2 O 2 .The linear regression equation isΔI pa =15.92+4.99×10 4 c(H 2 O 2 )(mol·L -1 )(r=0.9976,n=18)and the linear range for the determination of H 2 O 2 is1.72×10 -5 ～9.92×10 -3 mol·L -1 with a detection limit of4.25×10 -6 mol·L -1 (S/N=3).更多还原