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纳米团簇晶体的制备和结构研究
Fabrication and Structure Analysis of Al, Ga and In Nanocluster Two-dimensional Crystals
【摘要】 利用表面调制“幻数团簇”的方法制备出Al、Ga和In的纳米团簇人造晶体。这种方法是用Si(111) 7× 7表面作为“模板”生长尺寸相同和分布有序的纳米团簇。通过扫描隧道显微镜 (STM )原位分析结合第一性原理计算确定了金属纳米团簇的原子结构以及这些结构的形成机理。我们的研究表明对生长动力学的精确控制是制备团簇晶体的关键所在。此外 ,这种方法并不局限于制备某一种金属团簇。人造纳米团簇具有高的热稳定性和独特的结构使它们有希望在实际中得到广泛的应用。
【Abstract】 Using a novel technique of surface mediated magic cluster with identical size, in which the Si(111) surface is used as a template for ordering the cluster, we have fabricated the artificial nanocluster crystals of In, Ga and Al. The atomic structures, formation mechanism and stability of the nanoclusters were studied with in-situ scanning tunneling microscopy observation combined with first-principles total energy calculations. Our study shows that delicate control of growth kinetics is extremely pivotal for the cluster crystal fabrication, and there is essentially no limitation to this method. The high thermal stability and unique structure make these artificial nanocluster crystals promising for various applications.
【Key words】 In; Ga and Al; identical and ordered nanocluster; artificial crystal; scanning tunneling microscopy(STM);
- 【文献出处】 世界科技研究与发展 ,World Sci-tech R & D , 编辑部邮箱 ,2004年05期
- 【分类号】TB383
- 【被引频次】6
- 【下载频次】570