【摘要】 表面声波(SAW)在GaAs/AlxGa1-xAs量子阱表面沿一维电子通道方向传播时,可诱导产生声电电流.由于GaAs/AlxGa1-xAs材料的压电效应,伴随SAW要产生一个压电运动电势.该压电势与异质结中二维电子气(2DEG)的深度有关.作者采用准经典(WKB)近似,研究了2DEG的深度对一维电子通道中声电电流量子化特性的影响.更多还原

【Abstract】 An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the one-dimensional electron channel defined in a GaAs/AlxGa1-xAs heterostructure. The piezoelectric potential accompanying a SAW is related to the depth of the two-dimentional electron gas(2DEG) in the heterostructure.Using the WKB approximation, the authors discussed the effect on acoustoelectric current caused by the depth of the two-dimentional electron gas in the heterostructure.更多还原