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高分辨X射线衍射法研究碳化硅单晶片中的多型结构
Investigation on the Polytype Structure of SiC Crystal Sliceby High Resolution X-ray Diffractometry
【摘要】 我们采用高分辨X射线衍射法对SiC单晶片中的多型结构进行了研究 ,研究发现在以 4H SiC为籽晶的晶体生长过程中 ,4H SiC、6H SiC、1 5R SiC出现两相共存或三相共存现象。在单相、两相或三相共存区 ,X射线摇摆曲线具有明显不同的特征。根据多型结构 ,可以对摇摆曲线中的衍射峰进行鉴定
【Abstract】 The polytype structure of SiC single crystal slice was investigated by high resolution X-ray diffractometry. We discovered that there are two or three phase existence of 4H-SiC,6H-SiC,15R-SiC in the process of the growth of 4H- SiC seed at a definite condition. At different regions the rocking curves have remarkably different features. Base on the polytype structures of SiC, the diffraction peaks can be identified in the rocking curves.
【关键词】 碳化硅;
多型;
高分辨X射线衍射仪;
摇摆曲线;
【Key words】 SiC; polytype; high resolution X-ray diffractometry; rocking curve;
【Key words】 SiC; polytype; high resolution X-ray diffractometry; rocking curve;
【基金】 国家自然科学基金 (No .6 0 0 2 5 40 9);国家 86 3高技术计划 (No .2 0 0 1AA31 1 0 80 )资助
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2004年06期
- 【分类号】TN304
- 【被引频次】4
- 【下载频次】486