【摘要】 本文研究了重掺p型(B)和重掺n型(P、As、Sb)硅单晶的内吸除效应。发现在本实验条件下,经过改进的内吸杂(IG)处理后,不同掺杂剂的重掺硅单晶片都出现了氧沉淀增强现象,但不同掺杂剂的重掺硅单晶中氧沉淀形态不同。且发现砷增强了硅片近表层区氧的外扩散。在相同的热处理条件下,不同掺杂剂的重掺硅清洁区宽度不同,重掺硼硅片的清洁区最窄,重掺砷的最宽。更多还原

【Abstract】 The intrinsic gettering effect in heavily B, P, As and Sb-doped CZSi wafers was investigated in this work. The experimental results showed that oxygen precipitation in heavily doped Si wafers was enhanced after an improved internal gettering process. But the morphologies of oxygen precipitation were different in different dopant wafers. The out-diffusion of oxygen near the surface of silicon wafers was enhanced by As dopant. At the same annealing condition, the width of denuded zone in different doped silicon wafers is different. The width is the narrowest in the heavily B-doped silicon and the widest in the heavily As-doped silicon.更多还原