【摘要】 采用提拉 (Czochralski)法生长了Nd :LuVO4晶体。利用液相反应法 ,以V2 O5和NH4OH生成NH4VO3 ,Nd2 O3 、Lu2 O3 和HNO3 生成Nd(NO3 ) 3 和Lu(NO3 ) 3 反应制备多晶料 ;所生长Nd0 .0 1Lu0 .99VO4晶体为 16× 2 0× 2 1mm3 ,质量超过 4 0g。以X射线荧光分析仪测得其生长中各主要元素的分凝系数。其中Nd3 + 约为 0 .91,V3 + 和Lu3 + 接近 1。还测定了其介电常数ε11=2 7.2 ,ε3 3 =33.9(30℃ ,1kHz) ,以同步辐射X射线白光形貌术观察了其内部质量更多还原

【Abstract】 Nd:LuVO₄ single crystal was grown by Czochralski method. Polycrystalline Nd:LuVO₄ starting material was prepared by the solution reactions of NH₄VO₃ with either Nd（NO₃）₃ or Lu（NO₃）₃, which were obtained from respective oxide reacted with NH₄OH or HNO₃. The as-grown Nd_0.01Lu_0.99VO₄ single crystal sized 16×20×21 mm³ weighted more than 40g. The effective segregation coefficients were measured to be （0.91） for Nd³⁺ and near 1 for V³⁺ and Lu³⁺ during crystal growth by means of X-ray fluorescence. The dielectric constants ε₃₃ and ε₁₁ were determined to be 27.2 and 33.9 （30℃,1kHz） respectively. The crystal quality was observed with synchrotron white beam X-ray topography.更多还原