【摘要】 采用单质Se为原料(Zn Se H2 Ar体系)来生长CVDZnSe,初步分析了这种工艺的机理,并详细分析了各种工艺参数对生长ZnSe的影响。这些工艺参数包括沉积腔的温度和压力,Zn坩埚和Se坩埚的温度,各路载流气体的流量。对这些工艺参数进行调整和精确控制,并控制好Zn蒸气和Se蒸气气嘴处的ZnSe生长形态,生长出了质量良好的ZnSe多晶体,透过率超过70%。更多还原

【Abstract】 Polycrystalline ZnSe was grown by CVD with the so-called Se method （system Zn-H₂-Se-Ar） using Se as starting material. The paper analyzed the mechanism in brief and all kinds of technical parameters which affect ZnSe growth in detail. The technical parameters include the temperature and pressure of deposition, the temperature of zinc crucible and selenium crucible and the flux of each loading gas. By adjusting the parameters precisely and controlling the shape of ZnSe grown on the mouths of zinc vapor and selenium vapor,high quality ZnSe was obtained, which shows transparency exceeding 70%.更多还原