【摘要】 本文报导了Ce:YAP晶体位错蚀坑的腐蚀条件;同时报导了几个主要晶面的位错蚀坑形貌,(100)面呈扁豆形,(010)面呈菱形,(101)面呈椭圆形,这些形状与各自晶面的对称性一致。通过蚀坑形貌在晶体横截面内观察到了小面生长核心区和熔质尾迹等缺陷,并分析了其成因。更多还原

【Abstract】 The reasonable etching condition of dislocation in Ce:YAP was found out by a series of etching experiments. The typical etching figures of several main faces were reported. They show rhombus on (010) face, haricot-beam shape on (100) face and elliptic form on (101) face. The symmetry of an etch pit corresponds with the symmetry of a face on which the pit is created. The defects such as facet growth core and wake of melt were observed from etching figures on (101) face, and their causes of formation were analyzed.更多还原