【摘要】 利用13.56MHz射频等离子体增强化学气相沉积(RF PECVD)技术,高速沉积器件级质量的微晶硅(μc Si:H)薄膜,研究了沉积压力、射频功率、电极间距、氢稀释度等参数对沉积速率的影响.通过选择适当的沉积参数,得到了沉积速率为0.3～0.4nm/s的μc Si:H薄膜材料,薄膜的暗电导为10-7S/cm量级,光电导与暗电导之比近似为2个量级,电导激活能为0.52eV左右.所得的μc Si:H薄膜材料稳定性好,达到了器件级质量.更多还原

【Abstract】 High rate deposition of microcrystalline silicon films is studied by using radio frequency （（13.56 MHz）） plasma enhanced chemical vapour deposition（RF-PECVD） technique at high pressure.The influences of deposition pressure,plasma power,electrode distance,silane concentration and other parameters on deposition rate are studied.By selecting appropriate deposition parameters at high deposition pressure,the μc-Si:H films are obtained.Whose deposition rate is 0.3～0.4 nm/s,dark-conductivity value is 10^-7S/cm,photo- and dark-conductivity ratio is around two orders of magnitude,activation value is approximately 0.52 eV.The device quality μc-Si:H films were obtained.更多还原